Simulation Calculation Method For Low Energy Argon Ion Implantation In Amorphous Oxide

At room temperature,strontium titanate?SrTiO₃?crystals are an insulator,and the study found that doping can make the surface of the conductive layer,making it a semiconductor.The doping of Nb in SrTiO₃ enables it to conduct electricity,and its conductivity can be adjusted by changing the concentration of Nb.A decade ago,after bombarding Sr TiO₃ with Ar⁺,it was found that the surface of SrTiO₃ had a conductive layer,so they proposed an oxygen vacancy conduction mechanism.From then on,people began to study the conductive layer of SrTiO₃.The use of Ar⁺bombarding Sr TiO₃ is a very effective way to get the high conductivity layer,because the diffusion velocity of oxygen atom is obviously higher than that of titanium and strontium atoms.Up to now,the use of Ar⁺bombarding SrTiO₃ has found the phenomenon of blue light emission,photoelectric current phenomenon,magnetic resistance and so on.Therefore,the study of oxygen vacancy plays an important role in the study of SrTiO₃.Therefore,in this paper,the Ar⁺bombardment of SrTiO₃ ion implantation and defect distribution was studied,using SRIM process simulation Ar⁺bombardment SrTiO₃,studies the condition and the incident ion conditions on the distribution of the surface defects of the target material,at the same time,provides a consideration under the etching process of calculation method of the distribution of defects.In this paper,monte carlo simulation method is adopted to introduce the basic idea of monte carlo method and his reliability.The SRIM program is based on the monte carlo method.In this paper,SRIM program is used to simulate Ar⁺bombardment SrTiO₃.Meanwhile,to ensure the accuracy of simulation,the simulation parameters are explained.In particular,an important parameter in the simulation is the energy displacement threshold,which represents the minimum energy required for an atom to leave its position.In order to study the effect of incident ion on surface ion distribution and defects,this paper takes different energy and different Angle of incident ion Ar⁺bombardment SrTiO₃.Using SRIM process simulation Ar⁺bombardment SrTiO₃,Ar⁺the incident energy use 50eV,100eV,150eV,200eV,250eV,300eV,respectively.the incident angle of Ar⁺0°,10°,30°,50°,70°,90°,respectively.obtain the atomic distribution and the distribution of the defect,under the condition of the same incident ions compared the distribution of different atoms and under the condition of different incident ion compared to the same distribution and the distribution of the defect of the atom.The study shows that the distribution of Ar⁺and O atoms presents the gaussian distribution,and the incidence energy and incidence angle of the gaussian peak point horizontal coordinate Rp and Ar⁺are linear.In the aspect of defects,the distribution of oxygen vacancy concentration also presents the gaussian distribution,which also shows linear changes with the incident energy and incidence angle of Ar⁺.The difference is that when the angle continues to increase,the concentration distribution of oxygen vacancy will deviate from the gaussian distribution,showing the exponential decline trend.The effect of density change on the surface ion distribution and defect was studied.Simulated,taking the same way,the incident ions Ar⁺fixed energy is 300eV,incident angle of 0°?target material surface vertical incidence?,selection of target material density are 75%,80%,85%,90%,95%,100%of the initial SrTiO₃ crystal density.The study shows that the distribution of Ar⁺and O atoms also presents the gaussian distribution,and the horizontal Rp of the gaussian peak point is linear with the density of the target material.In the defect aspect,the distribution of oxygen vacancy concentration also presents the gaussian distribution,but the effect of changing the incident ion condition is smaller than the previous one,and the gaussian distribution peak has not changed much.Finally,a method based on monte carlo simulation is proposed to control the ion implantation time.Because of SRIM process cannot be used for simulating the time,that is to say,the simulation is not considering the effect of etching,but in the actual experiment operations,with the increase of injection time material surface etching.So the method on the basis of SRIM process,considering the actual etching effect in the process of experiment,using the method of iterative calculation,ion implantation time and calculated through ceaseless overlay,the relationship between the crystallization layer and auxiliary experiment of ion implantation in time.