Research On Radiation Displacement Damage On InGaAs Photodiodes With Simulation Methods

With the rapid development of space technology,InGaAs photodetectors have been gradually expanded into space applications and have played an important role in many fields such as space laser detection and satellite remote sensing.Radiation of a large number of protons,electrons,and gamma rays in the space environment interacts with optoelectronic devices,which can cause their performance to deteriorate or even fail.To summarize the law of irradiation damage and analyze the mechanism of degradation need to carry out a large number of irradiation experiments.In view of the limitation of irradiation experiment cost and condition,the numerical simulation of irradiation effect is paid more and more attention.In order to solve the above problems,this dissertation takes vertical incident type In GaAs PIN photodetector as the research object and conducts the numerical simulation research on the radiation displacement damage experiment and the radiation damage effect,which is the evaluation of the radiation resistance of the InGaAs photodetector and the anti-displacement damage of the device Reinforced design for reference.The main content is:(1)Through the numerical simulation of neutron irradiation effect of InGa As photodetector,the damage effect model of thin InGaAs thin target was established by geant4 software,and the numerical simulation of neutron irradiation damage effect of thin target InGaAs material was achieved.Taking the InGaAs photodetector with perpendicular incident PIN structure as the research object,the physical model of InGaAs photodetector was established by TCAD software,and the numerical simulation of the sensitive parameters was realized.(2)The similarities and differences of damage caused by neutron-proton and gamma-ray irradiation of InGaAs photodetectors are compared,and the simulation results of neutron,proton and gamma photon irradiation of InGaAs photodetectors are compared to help clear understanding Radiation damage mechanism.(3)Experiments of neutron irradiation damage of InGaAs photodetectors were carried out by carrying out the neutron irradiation damage effect test of InGaAs photodetectors: at the selected irradiation dose,the responsivity and the spectral response range of the samples did not appear Obvious changes;dark current increases with increasing irradiation dose;at the same irradiation dose,dark current changes are affected by the thickness of the absorber layer and the active area of the device.(4)Through the research on the change of dark current component with irradiation dose,it is found that the mechanism and variation rule of different dark current component and irradiation dose are different.When dark current change is analyzed,it should be differentiated and analyzed.Irradiation displacement defect leads to hole migration Rate and life expectancy decline,when the juvenile life is reduced to a greater extent,the overall effect is to increase the diffusion current;irradiation in the space charge carrier removal effect so that the composite diffusion current becomes larger.Introduce a numerical simulation method for predicting the radiation damage effects of InGaAs photodetectors was proposed.