Research And Design Of Microwave Inductor And Radar Circuit

Radar communication system plays a very important role in all walks of life,such as current military,security positioning and so on.with the development and diversification of wireless communication system and the integrated circuits,high performance and high integration circuits draw more and more attention in on-chip system.As the first level in radar receiving system,the gain and noise figure of low noise amplifier have great effect on the performance of the whole radar receive system.Based on the technology of Global Foundries 0.13um SiGe BiCMOS,the passive devices and active circuits in the chip are studied in this paper.Based on the GSMC 0.13um CMOS process,the LNA is expanded.Finally,the research and analysis of the radar circuit based on the chip at the PCB board level is carried out.The main research work and innovation of this paper are as follows:First of all,we designed a new type of inductor structure,compared with the traditional planar inductor,the occupied area was significantly reduced,the inductance of the self-resonance frequency is increased from 96GHz to 99GHz and the frequency of Qmax increases from 36GHz to 45GHz,which improves the inductor application frequency.Based on this,we analyze the parasitic effect of the inductor,based on comprehensive consideration of the skin effect and proximity effect,substrate parasitic,a new inductor equivalent circuit model,and completed parameter extraction and validation was proposed.The results are in good agreement with the simulation results.Secondly,we analyzed the inductance characteristics of transmission line,and a systematic qualitative and quantitative analysis of the characteristics of the coil inductor and inductance of the transmission line,considering the inductance value,Q factor and the occupied chip area,then we give respective advantages of the application frequency range of transmission line inductor and coil inductor.Then,based on the Global Foundries 0.13um SiGe BiCMOS technology to design a K-Band two classes cascode common source low noise amplifier,the gain in 24GHz is 27.3dB,the noise figure is 3.8dB,output 1dB compression point is-0.68dBm,in addition,we also designed LNA which can work in C-Band(5.8GHz)and X-Band(10.525GHz)dual band based on the GSMC 0.3um CMOS process.LNA gain at 5.8GHz is 15.3dB,at 10.525GHz is 17.1dB,the noise coefficient in the 5.8GHz is 3.37dB,at 10.525GHz is 3.68dB,output 1dB compression point at 5.8GHz is-6.3dB,at 10.525GHz is-6dBm.Finally,based on the two chips of ADF4158 and BGT24MRT12,the phase-locked loop frequency synthesizer of K-Band generating FMCW FM wave(triangle wave,sawtooth wave and oblique wave)is completed,and the processing test is completed.