Correlative Analysis And Improvement Of Dry Etching For Product Defects

Dry etching is a generic term that refers to the etch techniques in which gases are the primary etch medium,the wafers are etched without wet chemicals or rinsing.The wafers enter and exit the system in a dry state.The important dry-etching technique is plasma etching.It has a high etch rate,reasonable selectivity and good etch uniformity.While the level of process technology continues to increase,complex and ever-increasing chip costs have also been flawed due to various factors.For plasma etching,Most sensitive RF power for the etch rate,and the pressure can affect the etching rate and selectivity.In dry etching,the impact of product quality is the main factor: particles,RF power reflected,Vacuum,CDA pressure and uniformity.We have experimented with metal aluminum dry etching equipment and obtained data,using comprehensive analysis method to find out the best way to improve dry etching.The defects in the dry etching equipment are analyzed and sorted out,and the problems are solved to solve the problems in the actual production.This paper makes a research on the application of Failure Analysis,Eight Disciplines and Cause Factor Analysis which is found Dome Defect and Turbo Defect Causes of occurrence.At the same time,to find out the solution of effective and reasonable.At the first,this paper it introduces the research background and meaning,how to solve the defects of the application method in the work.The thesis combines theory with practice and explains the two common defects in the analysis.Based on the above,the paper makes a research on Dome Defect and Turbo Defect by the real case from production line.It introduces the basic theory,function and application research of Defect.Then it brought out the implementation process and how to improve the management through how to implement Defect.