A Study On The SOI MOSFET High Frequency Characteristic And Noise Model

As the device feature size shrink to sub-100 nm,bulk CMOS has met a series of technical and performance challenges.Increasing SCE(short-channel effects)make the bulk CMOS(Complementary Metal Oxide Semiconductor)technology to be difficult to follow Moore's Law.There has been more and more attention paid to silicon-on-insulator(SOI)technology in both industry and academia because of low power,high integration density,powerful ability of anti-radiation and high speed.Absence of accurate and reliable RF modeling limits the actualizing in RF application for SOI technology.When working at high frequencies,the effect of the noise generated within the device itself will play an increasingly important role in the overall system.Based on 0.13?m SOI CMOS process,the works in this thesis are focusing on RF modeling and high frequency noise.The main work of the research are summarized as follows:(1)SOI RF technology and its research at home and abroad were investigated.The structure and basic physical characteristics of SOI MOSFETs(Metal-Oxide-Semiconductor Field-Effect Transistors)including floating body effect were studied in detail.SOI MOSFET SPICE Model and RF modeling experience were also introduced.The investigation results could provide certain references for SOI RF modeling.(2)Based on the PSPSOI standard model,a semi-automatic model parameter extraction method was proposed for SOI RF modeling.The RF scalable model was modeled and evaluated,including the intrinsic and extrinsic model.And,the cryogenic dc performance and small signal ac performance of PD SOI nMOSFETs are investigated,which provides experience for RF model development and ultra-low temperature applications in the future.(3)A thermal noise modelling method for RF SOI MOSFETs was developed based on small signal analysis.The main noise sources and noise physical analysis methods of MOSFET devices were summarized.Based on the noise two-port network theory,the small-signal equivalent circuit of the SOI MOSFET device with noise source was proposed.The calculation method of the noise source and solving algorithm of the noise parameters were given in detail,which can provide a reasonable reference for the circuit designer and the chip designer.(4)Different from the traditional two-port network,a model parameter extraction method based on four-port network was proposed for SOI RF modeling.The impacts of SOI substrate on RF performance and the main substrate models were analyzed.And parameters extraction algorithm for the substrate network and body parasitic were proposed in detail,which would solve the difficulty of direct extraction of the complete small signal equivalent circuit.This results would be of a certain practical valuein the large signal modeling such as RF switch application.