Study Of Photodectors And Optical Interconnection System In Standard CMOS Process

Photoelectric devices based on standard CMOS process are of great significance in reducing the cost of optical interconnection systems.PD(photodetector)and LED(light-emitting diode)are two important devices of silicon-based optical interconnection systems.Due to the limitations of silicon material band structure and standard CMOS process,the responsibility and bandwidth performance of the silicon-based photodetector is poor.Bsides,another challenge of silicon-based opticl interconnection system is to improve luminous power and power conversion efficiency of silicon-based LED.To solve these problems,PD and LED which are compatible with standard CMOS process are studied,and give a presentation of silicon-based optical interconnection system.Three types of photodetectors and a forward-biased Si-LED array are designed,which are completely compatible with standard CMOS processes.The prociple of MSM(metel semiconductor metel)PD in standard CMOS process is studied.Metal / NWELL MSM PD is designed in UMC 0.18?m standard CMOS process.Besides,to shield slow photo-induced carriers generated in the deep substrate,this paper design interdigital P + / NWELL / P-SUB double PD and P + / NWELL SML(spatially modulated light)PD in UMC 0.18?m standard CMOS process,and utilize ATLAS to simulate double PD.Chip test of SML PD and simulation of double PD indicate that these two types of photodetectors successfully shield slow photo-induced carriers.The SML PD and double PD achieve 154 MHz and 1200 MHz bandwith respectively.A Forward-Biased Si-LED array with low operating voltage and high conversion efficiency is also designed and fabricated in UMC 0.18?m standard CMOS process.An optical power of 1800 nW is obtained at a forward current of 390 mA,and the power conversion efficiency is 3.5×10-6.