Research On 330GHz Terahertz Multiplier Chain

Terahertz technology is mainly used in wireless communication,object imaging,anti-terrorism detection, biomedical and food detection, environmental testing,astronomical observation these fields, Terahertz wave generation and detection have become the technical bottleneck of these applications, and over the years, domestic and foreign research institutions are committed to solving these problems, and the solid state terahertz radiation source which is supported by semiconductor technology occupies an important position. This kind of frequency multiplier has the advantages of compact structure, room temperature work, high reliability and low cost, and the terahertz multiplier is the key device of solid terahertz radiation Source.This topic researches the 110GHz and 330GHz tripler. Through reading a large number of access to domestic and foreign studies related to triplers, The principle of frequency doubling has studied deeply, and after the analysis of the overall circuit, using the parallel structure to design the triplers. In the process of researching, the three-dimensional electromagnetic model of the GaN planar Schottky diode operating in the 110GHz band and the GaAs plane Schottky diode working in the 330GHz frequency band were focused analyzed and given. And the method of impedance extraction for planar Schottky diode was introduced in the simulation optimization section, and then the three-dimensional electromagnetic modeles were used to simulate the triplers.Simulation results show, For the 110GHz tripler, with the driven power of 28dBm and the bias voltage of -8V, the output power is greater than lOmW in the frequency range of 107GHz to 115GHz, its peak power is 55.5mW at 110GHz with the efficiency of 8.8 %.As for the 330GHz tripler, with the driven power of 17.5dBm and the bias voltage of -2.3V, the output power is greater than 2mW in the frequency range of 317GHz to 336GHz, its peak power is 10.9mW at 329.7GHz with the efficiency of 19.3 %. And finally completed the physical assembly and experimental test research.The experimental results shows that the output power is greater than 2mW in the range of 106.8GHz-118.8GHz, with the frequency conversion efficiency is more than 1%, its peak output power is 4.7mW at 112.5GHz with the efficiency of 2.35%, the output power of the center frequency is 3.02mW at 110GHz with efficiency of 1.5%.With the driven power in the range of 18mW to 32mW, the output power of 330GHz tripler is greater than 0.1 mW in the range of 302GHz-336GHz, its peak output power is 0.26mW at 321GHz, achieved it's maximum efficiency 1.4% at 320GHz, and the output power of the center frequency is 0.17mW at the point of 330GHz. In this paper, the GaN planar Schottky diodes was the first time used in high-frequency studies, it accumulates experiences in the application of GaN materials in the terahertz band to obtain high power sources.