The Second Epitaxial Growth Of InP Based Photonic Integrated Devices

Optical device is the basis and the core of the optical communication system, which plays a critical role in promoting the development of optical fiber communication technology. Photonic integrated circuits(PIC) refers to a specific functional optic circuit, which consists of a number of optical devices integrated on the same substrate to constitute a whole system. These optical devices are commonly connected with each other by semiconductor optical waveguides. Compared with the traditional discrete photoelectric light treatment, photonic integrated chip has the advantages of miniaturization, low power consumption, multi-function, high reliability, cost-efficiency and less complexity, which improves the reliability of system. It is the main development direction in the future optical devices.Tunable wavelength converter is one of the key components in optical cross connection network, which has the function of dynamic wavelength routing. Tunable wavelength converter is composed of passive and active components. Active device includes a tunable semiconductor laser and semiconductor optical amplifier. Passive components usually contain couplers, phase shifter, delay lines. Since tunable wavelength converter involves the integration of active and passive components, second epitaxial growth method is thus implemented to achieve the monolithic integration. Among them, the semiconductor laser and semiconductor optical amplifier are the main devices of tunable wavelength converter, whose epitaxial layer contain In Ga As P layer, In P layer, P-In P, P +- In P, P+- In Ga As(ohmic contact layer).In this thesis, Metal-Organic Chemical-Vapor Deposition(MOCVD) equipment is used to grow In Ga As P layer, In P layer, P- In P, P +- In P, P+- In Ga As(ohmic contact layer) for individual growth. The epitaxial layers were tested by electrochemical capacitance voltage test technology(ECV), X-ray double crystal diffraction(XRD), scanning electron microscope(SEM), secondary ion mass spectrometry(SIMS), photoluminescence(PL). Then, we use the etching technology and surface cleaning measures to process epitaxial wafer. Finally, second epitaxial growth is employed to grow the In P, In Ga As P layer, In P layer, P- In P, P +-In P, P+– In Ga As ohmic contact layer by MOCVD and these secondary epitaxy chips have been tested and analyzed by SEM and ECV. Test results show that the second epitaxial growth quality has reached the expected requirements. Our work lays the foundation for realizing the integration between active and passive optical components.