Micron Array Red Organic Light-emitting Diodes With Lateral Emission

Organic Light-Emitting Diodes(OLED) have been wildly regarded as the next generation of display and lighting technology. Research community has conducted many investigations on this topic and important progress and achievements have been gained during these years. OLED has gradually entered lighting and display market, as well as special area such as military and medicine. This master dissertation is based on a project cooperated with PSA Peugeot Citron Automobile and Paris-Sud University. The main content is about the utilization of micron array red organic light-emitting diodes with lateral emission in vehicles. It can be treated as one of the special uses of OLED in industry.Organic materials, named NPAMLI and Zn(PPI)2, have been synthesized by organic synthesis method. By doping other materials to fabricate OLED devices with stable electroluminescence spectra and its maximum emitting wavelength at 633 nm. When NPAMLI was used in fluorescent OLED devices, the maximum luminosity was about 4000 cd/m2. The electroluminescence spectra shifted when the driving voltage increased and the doping concentration changed in small range. This did not meet the requirement of the project to obtain stable spectra. Phosphorescent OLED devices based on Zn(PPI)2:Ir(MDQ)2acac can get maximum luminosity higher than 20000 cd/m2 and maximum emitting wavelength at 630 nm, however, the maximum emitting wavelength would shift when the driving voltage increased. Devices based on Zn(PPI)2: Ir(piq)3 can obtain maximum luminosity higher than 20000 cd/m2 with stable maximum emitting wavelength when the doping concentration changed from 5% to 10% and the increase of driving voltage. Devices with total thickness of 400 nm were fabricated to match waveguide structure in the project.A silicon shadow mask with trapezium-shape was made by photolithography and Bosch etching method. When the interval of the shadow mask and the substrate is about 180 nm, the horizon diffusion of deposited material after evaporation is tiny. Patterned gold on SOI substrate, with size of 50 um array in horizontal direction and precise of 30 nm in vertical direction, can be fabricated by careful control of photolithography, etching, e-beam evaporation and lift-off process. Root Mean Square(RMS) roughness of the gold surface is smaller than 3 nm, which is sufficient to fabricate high performance OLED devices.