| On the applications of wireless communication, there’s a big competition between Si device and GaAs device. However, Gallium-Arsenide (GaAs) has historically been the preferred technology for Power Amplifiers, Low Noise Amplifiers etc., because of its intrinsically higher low-field electron mobility, low-loss semi-insulating substrate, higher linearity, higher transition frequency and breakdown voltage. Considering all of the above problem, this paper focuses on designing a GaAs low noise amplifier. For the circuit’s reliability, this paper also presents a GaAs Electrostatic protection circuit.On the one hand:low noise amplifier is a critical component of the receiver, which should has lower noise figure for improving the sensitivity of the receiver and has a higher gain for suppressing the noise of the second stage circuit, such as Mixer. The structure of the LNA consists of two source degenerated stages. Many GaAs LNAs require an external inductor as basing choke at the gate, but this paper using a big resistor instead. The result of post-simulation is that:maximum of the gain is 33.257dB,3dB bandwidth is 520MHz (1.13-1.65GHz). From 1.16GHz to 1.61GHz, S11 s smaller than-10dB. Over 1.14GHz-1.61GHz frequency range, the noise figure is lower than 0.6dB, OP1dB is greater than+19.6dBm, IP 1 dB is greater than-12.8dBm, OIP3 is bigger than 31 dBm, IIP3 is bigger than-2dBm. The area of the LNA’s layout is 0.88mm× 1.3mm. On the other hand:Electrostatic discharge induced failure s a great reliable challenge for GaAs-based integrated crcuits. And, due to the inherent lower thermal conductivity and melting point compared to silicon semiconductor. ESD-induced reliable issue is even worsen than Si-technology. Thus, an on-chip ESD protection circuit consisted of stack diodes is designed.Low Noise Amplifier is an important part of the receiver, and is a critical component in microwave and millimeter-wave applications, such as wireless communication, GPS, wireless local area network and so on. |
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