| β-FeSi2 is a new type of semiconductor material. It is also a kind of photovoltaic, thermoelectric material and has an excellent performance, can be used for the production of light-emitting devices,solar cells, thermoelectric devices, infrared detectors and other semiconductor devices. β-FeSi2 has a high photoelectric conversion efficiency, in theory, the photoelectric conversion efficiency of β-FeSi2 may reach 16%-23%, and this value is just after the crystalline silicon.This paper mainly studies the properties and craftwork of optical sensor based on the β-FeSi2, in order to make a good foundation for structure and application of the optical sensor.Firstly, sputtering process β-FeSi2 films by magnetron.we analyzed the film quality of β-FeSi2,focusing on the effect of the sputtering power and thickness of Fe film, compared crystal structure and morphology of the nature of β-FeSi2 films optimum: sputtering power 110 W, annealing temperature880 ℃, annealing time 13 h,geting the quality single phase polycrystalline β-FeSi2 film with the largest XRD peak intensity, and uniform grain size, relatively smooth and continuous film.On the other hand, we studied the properties and craftwork of single heterojunction β-FeSi2/Si and double heterostructure n-Si/β-FeSi2/Si. The results show that the responsivity of β-FeSi2/Si and n-Si /β-FeSi2 / Si, obtaining the spectral responsivity of β-FeSi2 film about 80mA/W, the quantum efficiency of double heterojunction n-Si/β-FeSi2/Si about 12%. |
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