Silicon Damage Issue Study During Copper Wire Bonding Process

Current the copper wire bonding technology is the more classical and popular technology in existing semiconductor pckaging process, which also takes the more and more marketing share in semiconductor packaging process. Now the copper wire bonding technology is being developed in china, while the bonding speedup rapidly, smaller package require that wire pitch and length reduce also; the ball size is smaller than before. Under above items, one big issue was exposed, that is the silicon damage under the pad, in our company the silison damage issue impacts negative the reliability of semiconductor component directly in copper bonding process.The paper to analyse and study the defect of the silicon damage by actual engineering experiments in different aspects which are containing the copper wire material, and free air ball forming, ball form bonding, capillary motion, capillary life span defination, lead frame clamping, machine vibrating, ultrasonic power output, ultrasonic characteristic, temperature characteristicv etc. Base on above lots of experiment data analysis to find out the factors of the silicon damage in mass production.According the engineering experiment data, the analysis result can provide the base to deeply undertstand and evaluate the quality impacts of ball bonding, and provide many data for further studing, in the same time, it also can guidinang process building for copper ball bonding.