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The Design Of A High Voltage IGBT Half Bridge Driver

Posted on:2016-07-11Degree:MasterType:Thesis
Country:ChinaCandidate:T WuFull Text:PDF
GTID:2308330473459741Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Serious shortage of energy, energy conservation has become a hot moment. To realize efficient motor driving has become increasingly important. Due to IGBT have both advantage of the MOSFET and GTR in motor drive applications, IGBT as a switch in the motor drive have more obvious advantages, IGBT achieve reliable and efficient driving has become a key to drive the motor.High voltage IGBT half-bridge driver circuit described in this process relies on existing laboratory platform, used to drive IGBT as a switch. Depending on the requirements of application, this circuit hopes to achieve targets: isolation up to the maximum pressure 600 V, the peak of output current up to + 1 A /-2 A, with perfect protection function, and low power requirements. This paper intends to adopt a foreign frontier isolation technology to achieve high and low signal isolation transmission, drive dual NMOS output stage as the output power of the device to increase the output circuit capacity of the circuit, adding over-temperature protection, under-voltage protection, stay-enable ports to achieve the reliability of the drive circuit work.This paper introduces the basic principles and the overall architecture of the high-pressure devices and circuit isolation technology, based on the overall architecture introduces the design idea of the four sub-circuits: Adding a Schmitt trigger circuit output stage to achieve compatible 3.3 V/5 V input signal; logic control circuit is achieved by logic operation of the entire control circuit; output driver stage to the control logic input signal to achieve power amplified output driver stage NMOS transistors, to increase the output current capability; add whole circuit internal voltage protection, over temperature protection to achieve the overall circuit efficiency, stable job. Another circuit uses the excitation power generating circuit into a 5 V supply voltage level to the chip to achieve power, to achieve low-power chip.Finally, the use of simulation software to various sub-modules and low overall drive channel simulation, and analyzing the simulation results, the validation of the theory.
Keywords/Search Tags:IGBT driver circuit, half-bridge, reliability, peak current
PDF Full Text Request
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