Sic Mosfet Testing Of Capacitance And Static Characteristics In A Wide Temperature Range

Power SiC MOSFET has become the new research and development power semiconductor devices with its high breakdown field strength, high temperature tolerance, low loss, high frequency, etc. With its ever-expanding range of applications, the problems of voltage and current imbalance in series-parallel device modules are attracted more attention. In addition, the driver circuit design of SiC MOSFET and analysis of the frequency of the primary circuit are closely related to these parameters. Thus measuring static characteristics and capacitance parameters of SiC MOSFET devices at different temperatures become increasingly important.The structure and the physical mechanism works of N-channel enhancement mode SiC MOSFET produced by Cree Inc analysised in the thesis. The relevant standard of MOSFET’s static characteristics and capacitance parameters is described here and some targeted testing methods are concluded. The Agilent B1505A with temperature control equipment tests the static characteristics and capacitance parameters in a wide temperature range and some possible errors would be corrected to ensure the test results accuracy. In the last part, variation and change properties of SiC MOSFET’s static characteristics is contrasted at different temperatures. Some physical mechanisms are explained here for the principles.This thesis is part of the project of "Preparation and Key Technologies Research in Application Characteristic of 1200V SiC MOSFET" of Smart Grid Research Institute(SGRI).This thesis provides measurement methods for the reliability testing and data for the establishment an accurate simulation model of SiC MOSFET devices.