L-band Microwave Low-noise Amplifier T/R Components Design

In a wireless communication system, a low noise amplifier circuit of the receiver system is an important part. The sensitivity of the receiver system are the main factors of low noise amplifier noise figure, power gain, noise figure and low noise amplifier for overall receiver noise performance of the whole system plays a key role. At the same time the power gain can effectively suppress noise from the post-stage circuit, so that the low-noise amplifier noise performance of the overall receiver plays a key role.A low noise amplifier in the receiving system front end, can be amplified RF signal can be effectively suppressed interference noise, improve the sensitivity of the entire system. L-band low noise amplifier typically used for electronic warfare, radar detection, in order to determine the frequency of the received signal, which requires to be very wide-band receiver, the receiver sensitivity will directly determine the distance away from the investigation, it requires as much as possible to improve the sensitivity of the receiver.In the L-band low noise amplifier design process, because the gain flatness, VSWR, noise and other indicators of mutual restraint, conflicting, so do some compromise choice. With increasingly powerful RF simulation software functions, low-noise amplifier design now commonly used simulation software to meet the relevant design, calculation of savings while saving manpower, financial resources and time.The main work and innovation of this paper:1.Survey of existing L-band low-noise performance amplifier products, in order to develop indicators according to the requirements for this project. The band is set to issue 1-2GHz, 1 octave, chip using ATF-54143, a wide frequency range and low-cost is the main advantage of this chip design. Most of the L-band low noise amplifiers are working around 200 M bandwidth, narrow, and the primary use of expensive chip prices.2.Analysis of the common resistors, capacitors, inductors and high-frequency characteristics of the basic model of the device in the microwave band.3.L-band low-noise amplifier options and choose the tube, the bias circuit design, matching circuit design, stability design, printing and layout design, cavity design and so on. ADS simulation software used mainly carried schematics, layout, has been co-simulation design.4.Commissioning, recording data, and phenomena such as self-excited analyzed, resolved to complete the objectives and requirements.This paper developed a low-noise amplifier using Agilent’s P-HEMT transistors ATF54143 levels of zoom, with the ADS simulation software to design the bias circuit of the amplifier, matching circuit optimization, the operating frequency at 1GHz to 2GHz, covering most of the communications band, with good market prospects. This paper developed a low noise amplifier in 5V DC voltage, measured maximum noise figure of less than 1d B, input and output VSWR less than 2, greater than the gain 24 d B, the flatness of the band less than 4d B, the basic completion of the established mission objectives.