Design And Simulation Of FeFET-based Lookup Table

For many years, the field of electronics and integrated circuits has been dominated by the MOSFET. However, the constantly growing field of space exploration has led to a high demand for electronics that perform properly and reliably in radiation environments. Due to the MOSFET’s undependable functionality in these environments, the ferroelectric field-effecttransistor(FeFET) has garnered growing interest for simple structure, non-volatile, low power consumption, high speed, large density, and the advantages of good radiation resistance. And some scientists predict it will take place of MOSFET. Despite this, only the FeFET’s use in memory elements has been extensively studied. In order to lay the groundwork for the numerous potential applications of the FeFET, this transistor’s behavior in the basic analog circuit configurations must first be examined and modeled to facilitate future research. Sentaurus TCAD device simulation software has been used to study the basic logic operation of the ferroelectric field effect transistor and mechanism of information storage in this letter. Some FeFET-based logic circuits and storage circuits are modeled. We also complete the function simulation of FeFET-based Lookup table.First of all, the Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure of ferroelectric field effect transistor was built with the Sentaurus TCAD according to the basic equations of semiconductor and polarization descriptive equations of ferroelectric. Then we research in the electrical performance under the condition of different material parameters and the voltage bias. The simulation results show that:(1) Ferroelectric layer determines the information storage properties of ferroelectric field effect transistor, and controls the channel conductivity directly.(2) The oxide plays the role of the isolation layer between ferroelectric layer and the silicon substrate, can also fell to the ferroelectric layer of voltage regulation, it can also adjusts the voltage of the ferroelectric layer.(3) The size of the gate voltage determines the performance of the transistor, FeFET can be used as a storage device for large gate voltage and a logic device for small gate voltage.Secondly, Some FeFET-based logic circuits including common-source, common-drain, inverter and the sensitive amplifier were built. They also have basic logic functions properly. Simulation results show that ferroelectric field effect transistor can complete the basic logical operations under the low operating voltage for its structure of MOSFET. Under higher operating voltage, the FeFET have storage capabilities.Finally, A FeFET-based lookup table circuit is built. The circuit is designed by optimization of the traditional lookup table circuit. A new read and write operation scheme is arised by researching the way of operation. We finished all the simulation of the circuits and lay the foundation of the application of FeFET.