Research On Device Simulation And Characteristics Of Striped Collector CIGBT

Power semiconductor devices are the core cell and hot research point of power electronics. CIGBT, short for clustered insulated gate bipolar transistor, is a kind of power semiconductor devices by MOS controlled thyristor turn-on and turn-off with excellent device characteristics of a large input impedance, low on-state voltage drop, enhance the short-circuit performance, fast switching speed and so on. It has a low on-state voltage drop and switch power even when it works at high power ratings.In this thesis, a 2500V striped collector CIGBT was designed by improving the collector structure of the traditional CIGBT. Based on the structure of striped collector CIGBT, various parameters of the device were analyzed how they have an effect on the characteristic of the striped collector CIGBT, and the optimization parameters of the device was determined with the impact of parameter changes on the electrical characteristics of the device analyzed with simulation. According to the structure of the device and the optimum device parameters, process flow was designed and the device was obtained through the process simulation. Finally, with the striped collector CIGBT simulated by device simulation, the static characteristics, dynamic characteristics and the changing distribution of carriers, electric field and potential in the turn-off process were obtained to analyze on-state performance of the device and the mechanism of the collector structure reducing turn-off power loss.The static characteristics show that the forward blocking voltage, threshold voltage and on-state voltage drop is 3020 V,5 V and 2.1 V individually. It has thyristor action and current saturation performance with positive temperature coefficient of on-state voltage drop. The dynamic simulations of the device show that its turn-off power loss is 400 mJ and carriers prefer to flow through P" collector where the barrier is lower during turn-off in order to reduce turn-off power loss. The research results show that the improved CIGBT with striped collector has excellent device characteristic. The thyristor turn-on action of striped collector CIGBT makes on-state voltage drop low. The turn-off energy loss is low due to the structure of striped collector.