| As the fourth kind of passive basic circuit element, memristor not only can be usedfor information storage, also can realize logic operation whose logical variable arememristor state, thus combine the data storage and logic operation closely. By abovethoughts, the thesis studies the reading, writing and logic operation based on memristorarray.Firstly, the characteristics of two mainly kind of memristor model--HP TiO2model and threshold model are compared, and corresponding Simscape model are given, which can be used in the Matlab simulation of a physical system. Also the basic circuit of OR, NAND are offered through the study of state logic of IMPLY and NOR, and related parameters are computed, to the nonlinear divided XNOR and NOR, the thesis uses five memristorsto realize. Secondly the process of reading and writing of memristor cross array are analyzed, the solutions are proved to be feasible through the theoretical calculation and experimental simulation. The thesis point out with the increasing of array size, the affect of leakage current to Duplication and IMPLY will become bigger and bigger. in order to overcomethe problem,1T1M structure storage to realize Duplication and IMPLY of row and column are adopted. Finally, a kind of composite structure3T2M1R associative storage (CAM) is designed which is composed of3NMOS,2memristors, and one resistor, utilizing the XNOR of input electrical level and memristor storage state, the process of reading and writing are analyzed, Compared with the traditional9and10transistors associative memory,3T2M1R has advantages of high integration, low power consumption, and Can be applied to large-scale CAM array.Memristor is characterized by a high level of integration, non-volatile, conversion speed (less than10ns) and compatible with CMOS technology, not only can continue Moore’s law, also can combine the data storage and logical operation naturally, providing a newmethod to overcome the "storage wall" problem. |
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