The Investigation On The Synthesis Of Three-dimensional CuInS₂Microshpere By Solution Method And Its Properties

Semiconductor CuInS2is a promising photovoltaic material, whichexhibits direct bandgap energy of1.5eV and matches closely the AM0solar spectrum. And the bandgap energy of CuInS2can be regulated byminimizing the size to nanoscale, which can also make it conducive to thefabrication of micro devices.Currently, the CuInS2nanocrystals reported in the literature can bedivided into zero-dimensional, one-dimensional, two-dimensional andthree-dimensional according to morphology. Among them, the report ofsynthesis of the three-dimensional CuInS2nanocrystals is relatively less.The nanomaterials with multi-dimensional morphology have goodphotovoltaic performance. In this paper, three-dimensional CuInS2hollow microspheres nanocrystals were synthesized using elementalcopper as raw material by solution-phase method, and characterized withSEM, TEM, EDs, XRD, UV, TGA and FT-IR.The synthesized CuInS2nanocrystals were drop-casting onto theinterdigital electrodes to evaluate its photocurrent response performance.To understand the impact factors of the photocurrent responseperformance of CuInS2nanocrystals, one-dimensional CuInS2nanocrystals were prepared and the growth mechanisms were studied. Byintroducing elements of zinc, gallium, antimony into the CuInS2nanocrystals, corresponding quaternary material was prepared and theirstructure was characterized. The results show that the introduction of Znand Sb elements can optimize the morphologies of the nanoribbons inCuInS2hollow microspheres, and the Ga element makes it nanobeltstapered shorter.