The Study On The Organic Diode Memory Devices And There Working Mechanism

As one of alternative for the next-generation storage technology, organic semiconductor diodememory has many characteristics, such as strong plasticity, low cost and high storage density,flexible. So far, the organic semiconductor diode technology is still stored in research stage. Thestability of the device is not controlled and a complete explanation of the storage mechanism has notyet formed. In view of this, research on how to control stability of memory devices for themechanism and the storage mechanism is very practical.This paper was prepared by designing a series of organic semiconductor diode memory devices,study about the performance of the device and its storage mechanisms were discussed to providesome contribution for the technical of organic semiconductor diode.(1) We improve the manufacturing process of graphene oxide (GO) and using GO tomanufacturing high-performance diode memory device. We have designed different annealingtemperature to prepare a different surface morphology GO films. The relationship between the filmmorphology and device performance has been studied.(2) Doping is an important technique for preparing organic semiconductor diode memory device.The study found that different devices using different structure have different storage characteristic.By doping different quantum dots, multi-level memory device has been successfully prepared.However, the performance of the device is not good. Further studies are necessary.(3) Organic small molecule material DCB, DCTA and4CzDAF is used to prepare diodememory. The performance of those devices has been studied. It was found that the performance ofdevice that made by different electrode material is different, and the memory device based on4CzDAF is showed typical dynamic-random-access-memory (DRAM) type memory behaviors.