Study Of Damage Effect Of High Power Microwave On Integrated Circuit

With the integration of the circuit system (IC) getting higher, the immunity for the electromagnetic pulse interference is degraded. The integrated circuit system may be failure temporarily or permanently because of the disturbance of the high power electromagnetic (HPM) irradiation. So it is an important subject to study the effects of the HPM of the IC as well as the protection technology.The testing methods are time-consuming, high-cost and lacking of theoretical analysis, while the theory simulation methods set up some ideal models, but it is not widespread. Aiming at the disadvantages of the two methods, the field-circuit method base on the software (HFSS and ADS) is built to analyze the damage effect of the low noise amplifier (LNA) of the high electron mobility transistor ATF54143. The field circuit method remedies the shortcoming of the ideal simulative analytical method by building the equivalent circuit model with the HFSS and ADS software, which analyzes the effect of the HPM to the gain, noise factor and potential of the pin. Results show that the gate of the ATF54143is the electromagnetic sensitive point. The horizontal polarized microwave radiates the LNA, the induced potential is minimum, while the induced potential is maximum when the polarization is vertical.The field circuit method and experimental method are presented to analyze the electromagnetic susceptibility of the daily-life electronic devices such as MP3players. the model of PCB of the MP3is built by HFSS. Meantime, the El anti-interference development experiment platform is established to measure the susceptive area of the MP3board with the interference of the SGZ21pulse packet generator. The results of the simulation and the experiment show that the HFSS-ADS field circuit method is a effective way the analyze the damage effect of the IC by the HPM interference, which provide a good guide to HPM protection.