Research And Design On The Microwave Plasma Cleaning Control System And Process

Lots of pollutant can be produced such as Fluorine, Nickel, Photoresist, epoxy andoxides, which will affect the quality of electronic products during IC production andpackaging.As a precise dry cleaning equipment, microwave plasma cleaning equipmentcan eliminate these pollutants, improve the surface performance and increase the surfaceenergy efficiently.Currently domestic microwave plasma cleaning equipment is not available in the market.An investigation on the equipment and process of microwave plasma cleaning is madeseparately in this project.(1) The study of microwave plasma cleaning equipment focuses on below criticaltechnology such as introduction of microwave, improving the microwave chargeefficiency during microwave transport, match of microwave source and load, ECRrotative cleaning model, microwave control system,and dynamic control of chambervacuum.(2) The process parameter of microwave plasma cleaning equipment is determinedbased on the experience in the process of13.56MHz microwave plasma cleaning, testresult of different process parameters and referring to some foreigndocuments.Microwave plasma cleaning equipment mainly includes design of system structure,design of rotation and magnetofluid sealing system, design of vacuum system, design ofelectric control, design of cleaning process parameter, design of reliability.After lots ofcleaning experiments, this new technology is expected to be a very effective way tocleanpollutants onmaterial surface and improve the surface activity.Moreover,it canbeconcluded that cleaning results relate to plasma charge power, flow rate of process gas,process gas, cleaning duration and cleaning model. Microwave plasma cleaning improvethe traditional cleaning method and it has been used in civil and military IC productionand packaging, which contributes much to the speedy development of this newtechnology.