Simulation Of ZnO Heterojuntion Solar Cells

Solar energy, clean and pollution free, is one of the most important solution of the energy crisis if it is efficiently developed and used. However, the cost of the solar cell produced and used at presented time is high and the energy conversion efficiency of the cell is low. Therefore, it is necessary to develop new type of solar cell to reduce the cost and improve the efficiency.Zinc oxide, CuZn2SeS4(CZTS), CuIn1-xGaxSe2(CIGS) are wide gap direct semiconductors. ZnO doping with Al is a good transparent conductive electrode and window layer material with lower resistivity, high light transmittance, non-toxic, cheap and high stability.CZTS is suitable for absorber layer with high absorption coefficient, non-toxic and rich in element. CIGS is high efficiency, high stability and better anti-radiation.Nickel oxide is a p-type oxide semiconductor material with 3d electronic structure and 3.0~4.0 eV band gap. Overall, CZTS, CIGS, NiO are good p-type semiconductor materials.In this thesis, three new type of models of n-ZnO/i-ZnO/p-CZTS, n-ZnO/i-ZnO/p-CIGS, n-ZnO/i-ZnO/p-NiO thin film solar cell are first presented based on the analysis of ZnO, CZTS, CIGS and NiO. The performance of the solar cells are simulated by using of AMPS-1D. The effect of i layer thickness, n/p compensating doping on the open circuit voltage, short-circuit current, fill factor and conversion efficiency of the solar cells was analyzed. The results showed that: the three variable parameters can more or less improve the Eff of cells except p compensating doping has little effect on CIGS cell. The conversion efficiency of CZTS, CIGS and NiO cells are 26.877%, 24.681%, 7.243% respectively in the ideal case.