Study Of The MPS Diode

With the development of power electronic technology, electric power devices powerdiode as an important foundation of power electronic technology has attracted wide attentionand research. Moreover, MPS with both SBD fast and PIN high withstand voltage alsobecomes a research focus. In this paper, the two properties are further investigated.First, the structure and working principle of PIN diode, Schottky barrier diode(SBD) andMPS diode are analyzed. Secondly, the structure parameters of reverse voltage with1300VMPS diode are estimated. Follow that, semiconductor device simulation software (Silvaco) isused to simulate and optimize the structure parameters to be designed. Next, we simulationanalysis aiming at PIN diode, Schottky diode, MPS diode and their reverse blocking andforward conduction characteristics is performed under the same horizontal and verticalstructure parameters and test environment. The detailed analysis includes comparing thestructures of three kinds of blocking and forward characteristics, investigating the influence ofMPS diode longitudinal parameters such as drift region doping concentration and thickness onblocking characteristics, studying the influence of Schottky area ratio of MPS diode onblocking and forward characteristics, researching the influence of cell size on blocking andforward characteristics, and all of efforts is for the purpose of improving and optimizingdevice structure. Finally, simulations of the three kinds of diode reverse recoverycharacteristics are given to compare reverse recovery time of the three kinds of structures.By simulating and comparing the static and dynamic characteristics of indicator MPSdiodes, Schottky diodes and PIN diodes, a conclusion that, for PIN diodes, the pressure dropis small, current density is big, reverse recovery time is short, reverse pressure voltage is high,and reverse leakage current is small can be drawn naturally. Therefore, MPS diode is apromising and new type of rectifier.