Optimization Of Developer Technic In0.18μm Lithography Process

The invention and application of integrated circuits, is one of mostimportant progress of science and technology. With CD size continuouslydecreasing, lithography technology faces a huge challenge. In order to meetthe improvement of semiconductor performance and reliability, this is notonly the problem of technology node across, but also need new technologyplatform of production equipment update and process optimization.In0.18μm lithography process, the developer technology has beenoptimization. This dissertation is based on the existing technology; furtherexplore the optimization of the development technology.The demand of CD precision is very high in0.18μm lithographyprocess, allow error is only0.014μm. Through experiment, this dissertationanalyzed the influence of the development process on CD, studied of thefactors which affect the CD, contain exhaust, PEB temperature, developersolution flow rate and the hot plates’ temperature after development. ForCD performance, we found the best development technology fromexperiments.In0.18μm lithography process, development causes the most defects.The main development defects contain surface particle, resist residue andreactant residue. These defects will be transferred to the actual circuit afteretch, and it will impact product’s yield or reliability. For these developmentdefects, this dissertation will design experiment and analyze the defectsengender mechanism, explore the optimum process method to reducedefects and increase yield. We also discovered cave defect and tiny residue,for these two types new defect, we studied their origin cause of formation, and then found the solution.The developer recipe decided to production process. Throughexperiment, this dissertation studied the influence of the developer recipe onproducts, analyzed developer solution scan recipe, DI water dispenserecipe and PEB recipe, then we found the best developer recipe,0.18μmdeveloper technology was optimized.