Research Of The Physical Parameters Models Of The Semiconductor Devices And Device Simulation

Characteristic simulation of semiconductor devices has become an important meanof semiconductor devices design and semiconductor devices research, and that willcertainly strongly promote to the development of the semiconductor industries. Thesemiconductor device characteristics simulation is based on the accurate carriertransport equations and the physical models that cause the study of semiconductordevices more accurate, efficient and convenient. The emergence of the third generationof semiconductor materials give the chance to design many of the new structure devices,and these new structure devices has many good features, such as higher frequency,higher breakdown voltage. But the third-generation of semiconductor materials are stillnot applied widely, so that some of the physical models are not accurate.This thesis is the above problems, physical models of the third-generationsemiconductor materials and novel device structures are treated as the main researchobject.with the understanding of the first and second generation of semiconductormaterials physical models, author try to put these mature physical models to as thephysical models of the third-generation semiconductor materials and then design a newtype of semiconductor devices with related characteristics simulation. Major workfollowing aspects:1.The description of the development of semiconductor devices and materials ismentioned, and the definition of the numerical simulation of semiconductor devices isdescribed.2.The process of the numerical simulation of semiconductor devices and thetransport equations and physical models which are used in this process are brieflysummarized.3. the author has done a research of the physical models of the first and secondgeneration of semiconductor materials which also have been summarized, and try to addwide band gap semiconductor materials to the Genius source with the study of thephysical models, including the band model, the mobility model, the carrier generationand recombination model, of the first and second generation of semiconductor materials. The wide band gap semiconductor materials, such as SiGe, GaN,3C-SiC,4H-SiC,6H-SiC, AlGaAl, are above mentioned. With these new materials, more newsemiconductor devices can be researched.4. The software Silvaco is used to simulate characteristics of Si bipolar transistors.The transfer characteristic curve, the output characteristic curve and its internal carriertransport process are well studied with Silvaco.With the2D device simulator software Genius, the simulation of characteristics ofSi bipolar transistor is also done. The two software simulation results are similar withthe comparison.GaN/Si heterojunction bipolar transistor characteristic simulation is also studiedwith the software Silvaco. In order to simulate GaN/Si heterojunction bipolar transistorthe reasonably accurate physical models, such as the incomplete ionization model, theband model, the mobility model and the carrier generation and recombination model,must be established.