| Copper indium diselenium(CuInSe2,abbreviated CIS)and its relative materialshave band gaps that match well with the solar spectrum, have large absorptioncoefficients, low cost, high conversion efficiency, good stability, etc., have greatpotential for photovoltaic applications. CIS thin films as the light absorption layerconstitute the CIS solar cells. There are two main methods can prepare the CISfilms, namely vacuum and non-vacuum process. The films prepared by formermethods have good quality, high conversion efficiency, but the price of vacuumequipment and the production cost are very high. On the other hand, thenon-vacuum methods have some advantages such as simple equipment, easy control,low cost and easy scale up. In order to provide some reference for mass production,non-vacuum methods were used for formation of CuInSe2films and its photovoltaicdevice in this paper. This paper mainly included these parts: the formation of Cu-Inprecursor nanoparticles, the preparation of precursor film, the exploration ofselenization process, and the preparation of CIS thin film solar cells. The structureof this paper are divided into three parts, the details are as follows:The first part mainly includes the preparation of Cu-In precursor nanoparticlesand the precursor film of CIS. We use two different methods: solvent thermalmethod and hot injection method to prepare Cu-In nanoparticles. Through thesolvent thermal method, copper sulfide powders with the mean grain size is2umand indium sulfide with average particle size is4um were synthesized, withuniform size. In the process for preparation of Cu-In powder with hot injectionmethod, has discussed how the Cu-In raw material mole ratio, reaction timeinfluence the results of the properties of Cu-In powders. From the analysis, we canget these conclusions: when the raw material of Cu-In with mole ratio1:1, we canget close to the stoichiometric mole ratio of the Cu-In powders.The second part is the preparation of CIS thin films by RTP selenide. In thispart, we use two different selenide processes: RTP selenide and dual temperaturezone selenide processing, and make comparison of this two methods. The purposeis to make the content of selenium in the CIS film to reach the stoichiometric ratio.Two methods both use selenium powder as a source of selenium, to avoid the use of highly toxic H2Se, this can make sure we are in the safety environment. But thecontrollability, repeatability of process, even the result of selenide has a gap withthe process of H2Se as the selenium source. Comparing the two ways of selenide，we find the result of RTP better than the dual temperature zone. Therefore, wemade discussion of selenide conditions in the RTP selenide process such asselenium temperature, time, selenide process of saturated vapor pressure etc. Afterdiscuss different factors, we finally got the best selenide conditions: the bestselenide temperature is550℃, the selenide time is35minutes. In this bestcondition, we acquired CIS thin film with obvious grain size of1.1um, the CIS filmis dense, holes and gap of intergranular are barely saw. The band gap of CIS filmwhich we get in this paper is1.01eV, which is closed to the previous reports.The third part is the preparation of low cost, high efficient CIS thin film solarcells. After the preparation of CIS film,we deposition CdS buffer layer; then usethe magnetron sputtering deposition ZnO/AZO window layer; the preparation ofNi/Al electrode.After a series of subsequent steps we made a CIS solar cells device.Finally, we test the photoresponse of CIS solar cells which can reach420mv.Through continuous improvement, we can make the CIS solar cells with maximumoptimization performance. |
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