The Research Of IGBT Power Loss Optimization

IGBT is short for Insulated Gate Bipolar Transistor. It is popular with its uniqueadvantages among many kinds of semiconductor power devices for owning both bipolarcharacteristics and power MOSFET characteristics. The design and optimization of IGBTis the guarantee for the improvement of power electronic equipment. Especially for that thedevelopment of IGBT in our country is still far more behind those developed countries, itis so important to work hard on the design of IGBT for the development of nationaleconomy and science. It has been a hotspot and difficulty in the field of internationalpower device research that how to further reduce the power loss of IGBT devices in orderto get the optimal performance of IGBT.This article described the power loss characteristics of IGBT by using simulationsoftware called silvaco, the influencing factors of IGBT power loss characteristics weredeeply analyzed, and by introducing of trade-off curve concept, the IGBT poweroptimization design was in the end concluded. All of the researches were made bycomprehensive analysis of IGBT power loss on both static power loss and dynamic powerloss in order to get total conclusion.Power optimization of IGBT aimed at reducing the static and dynamic power loss tothe least. Therefore, this article worded on analysis of IGBT static and dynamic power losstheory first, to make sure that the determining factors of IGBT static and dynamic powerloss were on-state voltage drop and turn-off power loss. And next, the special analyses onIGBT on-state voltage drop and turn-off power loss were made. The on-state voltage dropof IGBT was discussed through the simulation of IGBT output characteristics, the IGBTturn-off characteristics were simulated by the turn-off circuit, the IGBT power off wascalculated the integral of power loss during the turn-off period. It also explained theinfluences of power loss on the on-state voltage drop and turn-off power loss, including theparameters of P+collector, N+buffer layer and N-base of IGBT. And introduced thetradeoff curve between the on-state voltage drop and turn-off power loss of IGBT toanalyze and solve the contradictory relationship between the two losses. Through theanalysis of the tradeoff curve, it is more intuitive to find the influencing factors in power loss and carry on the further optimization, in order to get the optimum structure of IGBTincluding the P+collector, high resistance N-base area and N+buffer layer. And it wouldguide the optimization in practical manufacture.