| Recently, resistive random access memory (RRAM) is widely researched and isthought as the next generation RAM. The RRAM has many advantages includingsimple structure, high switching speed, low consumption, high density, low cost. Itsstructure is Metal-insulator-metal sandwich (MIM) structure.Ni:O thin film is one of P-type semiconductor materials, and can be applied onso many areas, including electrochromic device, sensor, photo-detector, dye-sensitized solar cell and so on. In addition, NiO thin film is one of the most researchedof RRAM materials and is a hot topic in research.In this paper, the NiO:Li thin film has been deposited by PLD and has beenstudied the effect of temperature of substrate and oxygen pressure. Based on thesecondition, we fabricated the RRAM device into Pt/NiO:Li/Pt structure. The resultsshow that: the NiO:Li thin film has been successfully deposited using PLD; the set/reset voltage, high/low resistance, the set/reset speed are2.4V/1.4V,200K/15K,200ns/1us in the RRAM device, respectively; the conduction mechanism can beexplained by SCLC model and the switching mechanism can be attributed toconducting filaments model. |
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