Research Of Resistive RAM Circuit

With the development of integrated circuit and semiconductor processingtechnology, it is more and more difficult for available memories to meet therequirements of electronic products. As a new type of non-volatile memory, RRAM(Resistive Random Access Memory), which has superior performance, has been widelyaccepted by the industry.First, basic theory of RRAM device is studied in this thesis. According to thephysical characteristics of RRAM device, behavior models of RRAM device are builtby two methods. Based on Verilog-A language, one of the RRAM device models isapplied to simulation and verification of RRAM circuit. Then, integrated technologiesof RRAM device are studied. Based on1R type structure, RRAM storage array andW/R scheme are designed. The theoretical calculation and simulation results show thatW/R scheme designed can meet the design requirements. Finally, based on RRAMdevice model and W/R scheme, a storage capacity of16×32bit RRAM storage array andperipheral W/R circuit, which include decoders, sensitive amplifiers, voltage selectingcircuits, a memory array, control circuits, are designed in SMIC0.18μm CMOSprocessing. The RRAM circuit has been implemented and verified by Cadence.Simulation results show that the RRAM circuit not only work normally, but also writeand read data accurately with no error.