Super Junction Field-effect Device Structure And Process Design

In the recent years, power devices-especially VDMOS(Vertically Double Diffused Metal Oxide Semiconductor) have been widely studied because of their extensive application in automotive field, industrial electronics, consumer electronics, computer market, etc.. But conventional VDMOS technology for power devices was constrained by the Silicon Limit. It is now improved to have linear relation between OnResistance (Ron) and BreakdownVoltage (BV) instead of the quadratic relation by SJ MOSFET(Super-Junction). When know some VDMOS knowledge, we analysis the device structure, manufacture process and electric theory of SJ MOSFET. Based on this theory we have designed a SJ MOSFET with BV over600V and simulated the manufacture process by means of Senturas-TCAD simulator. Firstly cell of the device were designed and the influence of the key parameters, such as pillar width, pillar concentration and trench depth were analyzed. At the same time, one termination have been designed and simulated. Finally, we got one SJ MOSFET device while the BV was over600V. Characteristics of SJ devices are greatly better than conventional power MOSFET.