Numerical Simulation And Experimental Research Of Vertical Cavity Surface Emitting Laser

In today’s highly developed modern laser technology, laser applications in increasing, widely applied to laser communication, laser ranging, laser is used as a heat source, laser weapons and military fields, and the vertical cavity surface emitting semiconductor laser is a kind of very good laser, although it is only thirty years. History, but because of its performance outstanding, has more than many previous laser device, vertical cavity surface emitting semiconductor laser applications have become more and more important, because of the direct use of devices for experimental cost is too high, then through the numerical simulation software on the device for experiment has become our assessment and improving performance of the device is the most an effective means.Through the analysis of VCSEL device structure and theoretical basis, draw the most basic rate equations, considering the carrier diffusion phenomena, the injected current characteristics, changes in temperature and the active area of the leakage phenomenon to discuss how to establish and implement model.Based on the rate equation of expression of the VCSEL temperature model, analysis of thermal effects in VCSEL work in the role, including the temperature dependency of the threshold current,output power heat saturation effect, small signal to the corresponding temperature correlation.Based on the temperature model establishes a two-dimensional VCSEL rate equation model, by using the software of MATLAB VCSEL numerical simulation experiment, the software was introduced in four order Runge-Kutta algorithm, the application of the algorithm to the simplification of the ordinary differential equation, based on the analysis of the injection current intensity and electrode shape, position of semiconductor laser transverse mode competition effects are discussed, because light angular uniformity on semiconductor laser mode selection effect.