The Investigation On SGG And CBN Waveguides By Ion Implantation

As the development of the science and technology, mankind has entered a highly information-based era. The information age demands abundance information, fast in-formation transfer, and fast information processing. So the integrated optics was pro-posed. The integrated optics has the advantages of optics and microelectronics, and the integrated optical system takes place of the huge optoelectronic system. The inte-grated optical system has the advantage of broad band, high speed, high reliability, resisting electromagnetism interfere, small volume, light weight. It can be widely used in optical communication, light sensing technology, autocontrol, electronic counter-measure, photon against, photon computer. Waveguide is the primary component in integrated optics system, which connects the various optical devices to form a func-tional optical device. It is very important to research the waveguide.There are many methods to fabricate waveguides, such as ion implantation, ion exchange, direct femtosecond laser writing, swift ions irradiation, film deposition, metal ion indiffusion, metal ion diffusion. The ion implantation technique is widely used due to the controllable number, energy, temperature and range of the implanted ions. There are many materials that have been used to make versatile waveguide structures formed by ion implantation, including optical crystals, semiconductors, polymers, ceramic and glass.In this dissertation, we report the planar and channel waveguide on the Nd:SGG and Na:CBN by using ion implantation and lithography. The effective refractive indi-ces of the planar waveguide are measured by the prism-coupling method using a Model2010prism coupler. We use the end-face coupling arrangement to measure the near-field intensity distribution of the guided light. We reconstruct the RIP of the pla-nar waveguide using RCM and ICM. We use FD-BPM to simulate the plots of the light propagation and the RIP of the channel waveguide. The back-reflection method is used to measure the propagation loss of planar waveguide and the propagation loss of the channel waveguide is measured by the end-face coupling method. The absorp-tion and fluorescence spectrums of the waveguide of Nd:SGG are measured. And the affection of different annealing condition on waveguide optical properties is also re-searched.SrGdGa3O7(SGG) crystal is an excellent laser material. The planar Nd:SGG waveguide was fabricated by500keV He ion implantation at a fluence of1.0×1016ions/cm2and at a fluence of3.OX1016ions/cm2. The RIP of the waveguides are all "well+barrier" distribution. The measured waveguide modes were in good agree-ment with the calculated results, indicating the feasibility of these designable devices. The propagation loss of the waveguide with3.0×1016ions/cm2He ion implantation is2.19dB/cm for TM mode and2.09dB/cm for TE mode. For the sample implanted with He, the spectra are similar to that of unimplanted Nd:SGG, except for a slight increased absorption. And the spectrum of the crystal with higher dose implantation is higher than the lower doses. The absorption spectra were higher after implantation due to the damage of the crystal lattice. The implantation process causes color centers and lattice dislocations, which absorb and reflect the light signal. It will produce more color centers and lattice dislocations in the crystal when implanted with higher doses and lower temperature. The enhanced well is mainly responsible for the waveguide construction. It is possible that the waveguides formed by the higher doses of He ion implantation at lower temperature have better confinement of light and a lower prop-agation loss than the lower doses.Calcium barium niobate (CaxBa1-xNb2O6, CBN) crystal which has tungstenbronze structure is a new metrical with excellent optical quality. Vacancies exist in the TTB niobate crystal. Thus, crystal quality and other proprieties can be im-proved by means of dopant ions or further molecular design. In Na-doped CBN crys-tals, Na and Ca occupy the same lattice sites in the Na-doped CBN crystal, and the curie temperature has been greatly improved by such doping. Planar and channel waveguide were successfully fabricated by ion implantation with (4+5) MeV O ions at fluences of (0.5+1)×1015ions/cm2. The refractive index distributions of the wave-guides were both typical "well+barrier", which implies good confinement of the light. Based on the RIP of the waveguides simulated by the RCM, we calculated the modal profile. After annealing at200℃for30min, the propagation loss of the planar and channel waveguides were respectively reduced to～3.7dB/cm and～3.5dB/cm. The loss seems to be lower if the fabrication and post-implantation annealing conditions are optimized. The measured waveguide modes were in good agreement with the cal-culated results, indicating the feasibility of designing these devices. We fabricate pla-nar waveguide by5MeV O ions implantation at fluence of5.0×1014ions/cm2. We researched the RIP of the waveguides when the sample was annealing at different condition.