The Current Source Control Of Bipolar Devices

Power semiconductor devices play a crucial role in the regulation and distribution of power and energy in the world. It is well recognized that the improvement in system performance in terms of efficiency, size, and weight are driven by enhancement made in semiconductor device characteristics.In this paper, a novel device structure was introduced, first proposed by Professor Chen Xingbi. The basic structure of this device is similar to the thyristor, which can make on state voltage very low due to the current regeneration effects. Moreover, this kind of device structure eliminates the current filamentation effects by controlling the density of both carriers-electrons and holes. It is worth noted that the current filamentaion effects put an obstacle in the front of many power semiconductor device, especially to the high power applications. The mechanism of this novel structure was detailed discussed, and the method of how to control both carriers was also proposed. Finally, an example of3300V cell design was introduced.In addition, this paper introduces Super-junction IGBT, also called SJ-IGBT and point out its unique conducting mechanism. Through extensive numerical simulation using TMA-MEDIC, it is found that the net doping concentration of N type and P type voltage sustaining layers greatly influence the on state characteristics of SJ-IGBT. Which is different from any other power semiconductor device, the SJ-IGBT has a mixed conducting mechanism of bipolar transportation and unipolar transportation. Just for this unique characteristic, SJ-IGBT has greatly improved the relationship between on state voltage and turn-off energy loss. In addition, we also discuss device’s blocking capability under different N type and P type voltage sustaining layers doping concentration and the influence of charge imbalance effect.