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The Photoelectric Properties Of Top-emission Organic Light-emitting Diode With Different Electrode

Posted on:2013-10-07Degree:MasterType:Thesis
Country:ChinaCandidate:T LuanFull Text:PDF
GTID:2248330371484415Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
Organic light-emitting diode(OLEDs), due to its low energy consumption,self-luminous, wide viewing angle, low cost, wide temperature range, fast response,continuously adjustable, luminous colors, flexible display, the process is relativelysimple, to attract the attention of experts and scholars in display researching field allover the world. It became the star of hope which most likely to replace liquid crystaldisplay. Researching of the organic light-emitting diode began in1963, and in recentyears, more and more researchers come to research the organic light-emitting diode.New materials, new structures of organic light-emitting diode reported in an endlessstream. OLED technology has been rapid development.According to the different directions of the light emitting from the device, we candivide the OLED into two kinds. The one is bottom-emitting type device (BEOLED)and the other is top-emitting device (TEOLED). As the light emitting from the top ofthe TEOLED, it can ignore the effect of the bottom driving panel, so that it caneffectively improve the opening rate, conducive to the integration of the device withthe driving circuit. Top-emitting device can also improve the efficiency of the device,narrowing the spectrum and improve the color purity, so it has a good prospect fordevelopment. For top-emitting device, the organic layer structure and is basically thesame with the bottom-emitting type device, so it has very important significance tostudy the electrodes of the top-emitting device.In this paper we study the impact of the electrode to the optical and electricalproperties of the top-emitting device. We simulate using different metal as the anodeof the top-emitting device. The structure of our device is Anode (100nm)/MoO3(3nm)/NPB (50nm)/Alq3(50nm)/LiF (0.5nm)/Al (1nm)/Ag (18nm).We select Ag, Al, Au, Cu, Ni, Mo as the anode of the device. We use SimOLEDsoftware to simulate the voltage-current density characteristics, current efficiency, and spectrum, spectrum with the angular variation characteristic, chromaticitycoordinate with the angular variation characteristic, cavity emission of the device. Wealso use FDTD Solution software to simulate the light extraction efficiency ofdifferent metal anode devices. After comparing the data obtained by the simulation,we sort the devices as Ag, Au, Cu, Al, Ni, Mo by the optical and electrical propertiesof each device. Considering the compatibility of the device and the IC processing, wemake the decisions to select Ag and Cu as the anode of the device. We test the Opticaland electrical properties of the two devices, and we compact the voltage-currentdensity characteristic curves and the spectrum of the two devices. It shows that theexperimental and simulation results are basically the same. We also compared theoptical and electrical properties of the two devices, the turn-on voltage of the deviceusing Ag as the anode is2.5V, while the device using Cu is2.5v.The emission peakpositions of two devices are respectively at wavelength550nm and570nm. And theemission peak positions of two devices will be blue shift with the increase of the testangle. The maximum luminance of the two devices can be reached by69000Cd/m2and37000Cd/m2. The maximum luminance of the device with Ag anode is85%higher than the device with Cu Anode. The maximum current efficiency of the twodevices can be reached by11.2Cd/A and5.79Cd/A. And the maximum currentefficiency of the device with Ag anode is nearly50%higher than the device with CuAnode.
Keywords/Search Tags:top-emitting, electrode, photoelectric properties
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