The Study Of InGaAsN Laser Fabricated With PAO

Instead of former ways of thermal evaporation plating and magnetron sputtering, this paper adopts pulse anodic oxidation (PAO) method.Compared with the traditional methods, ulse anodic oxidation (PAO) method is a simple way with a shorter process cycle and a better film quality. Meanwhile, this paper introduces this particular material called InGaAsN with respect to its merits, forming mechanism, wavelength range, temp-erature sensitive characteristics and so on.Among these aspects, the distribution ratio of In and N has been analyzed. Epitaxial wafer grows with the MEB system, combine with the F-P cavity and ridge waveguide structures, and the detailed introduction and ill-ustration for the followed strain quantum-well laser.We carried out a data test to the laser designed and produced,and the results show that: At room temperature 20℃, the threshold-current of InGaAaN strain quantum-well laser is 29mA and its density is 290A/cm2. The output power reached 15mW in cw mode from the laser with a wavelength of 1.3μm. The slope efficiency of laser reached to 0.125W/A and the characteristic temperature was 133K. We can draw a conclusion from the comp-arative analysis, preparing passivation layer with pulse anodic oxidation(PAO) method has a better compactness and firmness than ordinary magnetron sputtering method.