Using The Software Platform Design, The Drive Circuit Of Energy-saving Lamps In The Half-bridge Power Mosfet

LDMOS as a lateral power device all of its electrodes locate at the surface.Thus easier to be integrated monolithically with other low voltage signal circuits through interconnects.Now it has been employing more and more widely in power integrated circuits in view of such advantages as hip breakdown voltage,large gain and low distortion, etc. The design quality and reliability of LDMOS determine the performance of the whole circuit.Traditional design method of LDMOS mainly surrounds the trade-off between breakdown voltage and specific on-resistance.But there exists the fact that LDMOS has to use big current and high voltage and then operates in high temperature region . So the design of safe operation area(SOA)is absolutely necessary.As a result, breakdown voltage, specific on-resistance and SOA should be considered synthetically so as to obtain the best performance both of device level and circuit level.Firstly, this thesis reviews the historical development of power devices, and then introduces several junction termination techniques, such as field Electrode, field limiting ring, lateral variation doping, this junction termination design of LDMOS technology is widely used.Secondly, the structure of LDMOS is designed for using MEDICI to achieve the device simulator and using TSUPREM-4 to achieve the process simulation and then this thesis designs a complete process.Thirdly, this thesis designs the technology and layout of the devices LDMOS. And then this thesis analyses the single element package, tip pressure and shallow trench isolation technology.Finally, the chip designed in this paper is summarized and the trend of this research is introduced.