P-type Cu <sub> 1-x </ Sub> Ni <sub> The X </ Sub> O Transparent Oxide Semiconductor Thin Film Preparation And Performance Analysis

CuO and NiO powder mixture was used to synthesize ceramics by solid reaction and corresponding thin films were fabriacated by pulsed plasma deposition.The electrical,optical and structure properties of the targets and films were characterized by four-probe method,profilometer,spectrophotometer,XRD,AFM and SEM. Cu_1-xNi_xO films were deposited by PPD for the first time,so the relations between their physical properties and deposition parameters were investigated in detail.The Cu_1-xNi_xO targets exhibited p-type conductivity at room temperature.XRD test demonstrated the CuO and NiO mixed phase.The composition optimization showed that the resistivity of the Cu_0.95Ni_0.05O target is the lowest,256Ωcm.Ni doped CuO p-type TOS thin films were deposited with the Cu_0.95Ni_0.05O target.It is found that pure O₂ working atmosphere,large working voltage,and low substrate temperature is good for the p-type conductivity.The conductivity of Cu_0.95Ni_0.05O_1+δ films deposited at room temperature increased first and then decreased as the oxygen pressure increased from 2.6 Pa to 3.4 Pa.The average visible transmittance increased from 65%to 74%after annealing.The sample deposited at Ts = 30℃,P_O2 = 3.0 Pa,U = -18 kV,I = 4.5 mA and t = 20 min exhibited the best conductivity,7.1 Scm^-1,and the average visible transmittance is 65%.Cu doped NiO p-type TOS thin films were deposited with the Ni_0.9Cu_0.1O target. The Ni_0.9Cu_0.1O_1+δ films exhibited p-type conductivity.The conductivity of films deposited at room temperature increased as the oxygen pressure increased from 2.6 Pa to 3.4 Pa and the average visible transmittance increased from 71%to 85%after annealing.The sample deposited at Ts = 30℃,P_O2 = 3.4 Pa,U = -18 kV,I = 4.5 mA and t = 20 min exhibited the best conductivity,1.4 Scm^-1,and the average visible transmittance is 71%.The research results reveal that Cu_1-xNi_xO(0≤x≤1) is a novel p-type conductive transparent oxide semiconductor,showing relatively good optical and electrical properties and worth further studying.