High-power X-band Power Amplifier Chip Design

The X band high power amplifier(HPA) discussed in this thesis is realized by MMIC method. The HPA is mainly used in phased array radar T/R module and is most important part of the phased array radar T/R module.Chapter 1 is brief introduction on the HPA MMIC. In chapter 2, we discuss the detail of MMIC process including Metal Semiconductor Field Effect Transistor (MESFET) and Heterojunction Field Effect Transistor (HFET). In chapter 3, we introduce the basic of power amplifier and power combining technology in MMIC. In chapter 4, we discuss the design technology of HPA MMIC, such as HPA topology, thermal characteristic and dimension parameter of transistor, stability of HPA, wide band matching technology and so on..In the last chapter we present the design process of HPA MMIC with output power 5W, efficiency 30%, bandwidth 8GHz-12GHz, chip area 4mm×4mm.