Preparation Of Zno Thin Films And Piezoelectric Sensor Piezoelectric Structure Finite Element Analysis

Zinc Oxide (ZnO) is an II-VI n-type compound semiconductor with direct wide-band gap, and a hexagonal wurtzite structure. It has many outstanding physical and chemical properties and has been applied in surface acoustic wave (SAW) devices and piezoelectric sensors for its excellent piezoelectric properties.In this paper, the DC reactive magnetic sputtering method was used to prepare ZnO thin films on Si substrates. The effects of various deposition parameters like temperature of substrates and ambience of sputtering have been investigated especially. With sputtering technologic parameters being optimized, ZnO thin films with good performance were prepared in the mixed ambience of Ar and O₂ (Ar:O₂ = 4:1) at 300℃.The results showed that the ZnO thin films were strongly preferred-orientation, which were nano-crystallite with smooth surface. The piezoelectric coefficient d₃₃ and electric-resistivity p of the prepared ZnO thin films were also studied, which were in the order of 10^-12C/N and 10⁷Ω·cm respectively.ZnO piezoelectric sensors designed with the structure of cantilever of 500μm×500μm×0.5μm were analyzed by Finite Element Analysis (FEA), and the frequency of resonance and distribution of deformation stress under load were simulated with ANSYS. From the emulation mode, the resonance frequency of cantilever and images of deformation stress were presented in the paper.Through the research of this paper, we have laid good foundation for the further research of ZnO piezoelectric sensor array.