Research And Design Of The Insulated Gate Bipolar Transistor (igbt)

IGBT is short for Insulate Gate Bipolar Transistor. It greatly expands the semiconductor device applications field in power industry, as it has multiple advantages of MOSFET and GTR. For example, it improves the performance of the air conditioner remarkably when used in convert circuits in frequency conversion air conditioner.In the latest thirty years, the manufacturing technology for IGBT is being developed constantly in the world, but there's still no manufacturer in our country. There're many causations. The main point is the P+N- anode junction. We need to form high resistance layer from the low one, in order to obtain high breakdown voltage and low Ron at the same time. It's mentioned in Chapter 5 technology design. At present, Hang Zhou Silan Microelectronics Joint-stock Co.,Ltd. introduced a production line for growing thick epitaxy, which makes it possible to prepare the anode structure. Therefore, Microelectronics Institute of Zhejiang University cooperates with Silan to develop the IGBT device.As a part of the project, this thesis is responsible for IGBT theoretical research and tech/device design and computer simulation, including physics analysis and tech/device optimization and so on.Here, we probed into some impacts on the device characteristics, summarized some design considerations of the main parameters, and simulated the designed device. According to the technology conditions from Silan, we tried tech/device simulation, and put forward a new process including twice poly-Si deposition that reformed the triangle phenomenon in deep P- well formation.Contrast with the major target characteristics: VT = 3V(2.5-4V), IA=15A, BVAC＞600V ,our design matches well except the anode current. In fact, we can try to design the third dimensional structure to improve the current, or reduce the gate oxide a bit. As a result, we still need to adjust in the producing trial.