Carbon Nitride Films Field Electron Emission Characteristics Of Study

Carbon nitride thin films were prepared by dc. magnetron sputtering and microwave plasma enhanced chemical vapor deposition(MPCVD) on A^Os ceramic substrates with Ti coatings as interlayers. Field emission properties of carbon nitride films were measured in high vacuum chamber. It was found that field emission of carbon nitrides depended on their deposition conditions.Field emission of carbon nitrides prepared by dc. magnetron sputtering was found to have an intimate relation to substrate temperature and N2/Ar ratio in the sputtering gases. The sample synthesized at the temperature of 400 癈 and 70%(volume) Nj had best field emission character in our experiments.The correlation between field emission properties of carbon nitrides deposited by MPCVD and their synthesis parameters was analyzed. When the N2/Ha ratio remained constant, the field emission properties were improved when the flow of methane in the reactive systems was increased. With constant proportion of CFLt in the reactive systems, the threshold was lowered and the current density was raised when N2/H.2 ratio was enhanced. The best emission characteristic was obtained when the flows of N2 and H2 were both SOSccm and the flow of CFLt was SSccm. Threshold as low as 1.1 IV/um and emission current density of 17.5uA/cm2 at an electric field of 5.9 V/um were reached.