Monte Carlo Simulation Of Carrier Transport Study

The article studies the carrier transport problem by the Monte Carlo Method. On the basis of introducing Fourier Thermal Conduction Law and the basic concept in microscale thermal conduction, this paper interprets why use the Monte Carlo Method to study the carrier transport problem. This paper introduces the Monte Carlo Method systematically including its concept, classification, the general procedure, and the application in the semiconductor device simulation. The Monte Carlo Method uses the pseudo-random number, so this paper explains the production and evaluation method of it. And this paper mainly interprets the electronic scattering theory. Finally this paper simulates GaAs material including the average energy, velocity, and time occupation rate in different energy valley of it. And this paper simulates GaAs diode including the average energy, velocity, and the mean free path of it, and derives the thermal conductivity from the simulation result of it.