Aluminum Induced Effects On The Growth Of Polycrystalline Silicon

In this paper, we were analyzed the development process of the preparation of polycrystalline silicon film of aluminum –induced.Specific studied the preparation and characterization of polycrystalline silicon film of aluminum-induced. By improving the process conditions and preparation parameters, such as substrate material, coating a substrate temperature of the material, coating time and B-doped, to prepare the polycrystalline silicon film. The main steps include that deposition of amorphous(microcrystalline) silicon film by PECVD, aluminized by vacuum deposition and preparation of polycrystalline silicon film by annealing treatment. X-ray diffraction(XRD), UV- visible spectrophoto meter laboratory instruments, optical microscopy, and scanning electron microscopy were developed to characterize the crystal structure, optical and structural properties of polycrystalline silicon films. Compared with other methods, the Si thin film and Al film deposited on a clean glass surface or FTO surface by enhanced chemical vapor deposition(PECVD)and vacuum evaporation. The film deposition process is simple and substrate materials are very cheap, the deposited film has good uniformity that it is suitable for large scale industrial product.Our laboratory has been prepared a polycrystalline silicon thin film by aluminum-induced successfully. Our experiments prepared amorphous,microcrystalline, polycrystalline nucleus with the raw materials of silane(SiH4) and the carrier gas of hydrogen(H2). Then, annealing treatment with aluminum-induced to obtain polycrystalline silicon thin film. Study the influence of aluminum for the size and the growth preferential orientation of polycrystalline silicon thin film nuclear, through the polycrystalline silicon thin film characterization.We find that Aluminum-induced in favor of silicon transform into polysilicon from amorphous silicon and the growth polysilicon nuclei.With the scanning electron microscope, we find, with respect to the directly with the plasma-enhanced chemical vapor deposition(PECVD)of amorphous silicon(microcrystalline), the aluminum-induced nucleation is Significantly greater, for polycrystalline lattice orientation prefer(111) and(220) direction.