RF SOI CMOS Process And Device Simulation And Circuit Application Research

In recent years, the portable systems and wireless communication systems have got the rapid development. With the development of these systems, the consumption of electronic products has shifted to RF field. It makes a broad prospect for the SOI technology:on one hand, as the radio frequency field portable systems and wireless communication systems are mostly use the battery as an energy source, thereby reducing system power consumption and drive voltage will be the most important issue to be resolved. The parasitic capacitance of SOI CMOS is small, so it becomes a key technology for the solution of the problem. On the other hand, the development of the RF field has requirements of integration level and operating frequency increase, so the coupling noise becomes more critical. Oxy-isolation of SOI CMOS technology has got a complete separation between devices and the substrate and greatly reduces the high frequency RF and digital, mixed-signal crosstalk between the device phenomena, thus coupling the noise problem is the greatly improved.In the project which this paper belong, we take part in the developing of the Shanghai Belling Corporation 0.5um SOI CMOS Technology Platform. Using Silvaco software to simulate of SOI CMOS technology used, and make a study and improvement for the SOI CMOS technology platform of the company conducted. Since the SOI CMOS Technology Platform is the first in the country, so the results obtained by simulation and research for the improvement of SOI CMOS technology are important.In this paper, the results we got are as follows:1. Introduce the SOI CMOS process flow in details, and use SILVACO software process for process simulating. We adjust the process parameters based on the simulation results. The results obtained by simulation and research provide a theoretical basis of SOI CMOS technology in the country.2. Make a research of the SOI CMOS devices, especially the characteristics and special structures of PD SOI MOS devices.3. Design a RF front-end RF SOI CMOS switch circuit and draw the switch circuit layout. Then improve and simulate the circuit.