Research On High Temperature Characteristics Of An IEC-GCT

Injection efficiency controlled Gate Commutated Thyristor (IEC-GCT) is a new high power semiconductor device based on anode short Gate Turn-Off (SA-GTO) thyristor. Because IEC-GCT usually operates at high voltage and current, and produces more power loss, which causes the device's junction temperature or environment temperature to rise, and results in the characteristics deterioration and unstable work of device. So it's very important to research the high-temperature characteristics of IEC-GCT.The structure, operation principle and characteristics of IEC-GCT at room-temperature are analyzed briefly in this thesis, and the influences of high temperature on characteristics of IEC-GCT are analyzed mainly. The analytical model of high-temperature characteristics is set up, and the static and dynamic characteristics of IEC-GCT at high temperature are simulated. And then anode and cathode thermal dissipation are analyzed by ANSYS simulator. The improvement methods of high-temperature characteristics are presented. The optimal design structural parameters of 2kA/4.5kV IEC-GCT is also given. The main content is as follows:Firstly, the structure features and operation mechanism of IEC-GCT device are briefly analyzed. The influences of key structure parameters on the characteristics of IEC-GCT devices are discussed. And the characteristics of IEC-GCT at room-temperature are analyzed by ISE simulator, and compared with that of conventional IEC-GCT. The results show that conducting characteristic and turn-on characteristic have been improved.Secondly, the influences of high temperature on characteristic parameters of IEC-GCT are studied. Aiming at the various effects of power devices in practical operation, the physics model parameters according with the practical case are extracted, and an analytical model of high-temperature characteristic is set up, and transplanted to ISE simulator. The static and dynamic characteristics of IEC-GCT at high temperature are simulated. The optimal design parameters of 2kA/4.5kV IEC-GCT is also given.Thirdly, the structure features and principle mechanism characteristics of the corrugated p-base IEC-GCT are analyzed. The characteristics of the corrugated p-base IEC-GCT at room and high temperature are analyzed respectively by ISE simulator, and compared with that of SA-GTO device. The results show that the conducting, switching characteristics and revese biases safe operation area (RBSOA) of the corrugated p-base IEC-GCT have been improved.Lastly, the anode and cathode thermal dissipation are analyzed by ANSYS software. The results show that the heat should be accumulated when anode area adopts a low thermal conductivity material. So the suitable high thermal conductivity material should be adopted as the anode barrier layer. And trapezoid gate-cathode structure is better than rectangular gate-cathode structure in chip utilization ratio, current uniformity and thermal dissipation.The research results have a reference value for the development and study of national GCT devices.