Studying Of The Optimal Design And Device Structure Of Power VDMOS

VDMOS is a new generation of power semiconductor devices, the microelectronics and power electronics technology integration together. It is different from the earlier of the MOS tube, the structure has been adopted a number of improvements. It have a series of advantages, such as, switching speed, high input impedance, negative temperature coefficient, low drive power, manufacturing process is simple and so on, which has been widely applied in the field of power electronics. At present, it has been formed a large-scale production in the international community, while in China the VDMOS design is at the initial stage. Therefore, it is very important to study and model the physical and electrical characteristic of VDMOS.In this article, the breakdown voltage of 60V, 100V and 500V of the VDMOS discrete devices are designed separately. At first, the basic structure and working principle of VDMOS device are described. A variety of electrical performance parameters and structural parameters of the relationship between them of the device is described and analyzed. The VDMOS extension parameters, unit cell size and the number of single cell, terminals structure and other parameters of vertical and horizontal of the ideal value are determined by the classic formula for theoretical. Then ISE software is used to simulate and validate the device characteristics. Through the simulation of the device voltage, threshold voltage and the resistance to optimize the values got by approximate calculation. Next, according to structural parameters, the device layout of 60V, 100V and 500V VDMOS that can be used for actual production are completed by the L-edit layout drawing software. On this basis, the production process of the device is determined, and the problems in the technology Pipeline are analyzed. Finally, the summary of whole dissertation is presented and the issues to be studied further are also proposed.