Design Of Millimeter-Wave CMOS Passive Component

The passive component of millimeter-wave CMOS have been reserashed in this thesis. Planar spiral inductors with different turns for the design and modeling have been finished . we have come to the simulation curve of different turns, different width, different line spacing and different diameter of the inductor. After the model simulation between 1~100GHz, Obtained inductance is 0.2~0.5nH. the max Q is 8. For the structural characteristics of MIM capacitors, proposing the equivalent circuit model in CMOS process, The calculation method of the specific parameters have been geiven, while multi-layer capacitor model has been established in HFSS. Capacitance, Q values and self-resonant frequency of different layers have been extracted. Obtained capacitance is 0.002-0.015pf at two layers. And it increased to 0.02~0.05pf at five layers. Q values decreased from two layers'450 to five layers'70.Based on the establishment of the spiral inductor and MIM capacitor warehouse, The 24GHz and 60GHz band-pass filter have been designed respectively. the filter center frequency can be matched design requirements well. T-inductively coupled structure have adopted to design 60GHz band-pass filter circuit. Simulation results can well meet the center frequency at 60GHz, bandwidth have been controlled at 20GHz, and the return loss is 37dB, insertion loss is still less than 1.5dB, based on the T-inductively coupled filter, The introduction of transmission zero have been considered. The transmission zero can be achieved at 34GHz. the available bandwidth is 18GHz, the return loss is 60 dB, and insertion loss is still less than 1.5dB.