The Application And Case Study Of FIB System In The IC Failure Analysis

Accompany with the development of the semiconductor technology, critical feature is becoming smaller and smaller, so failure analysis has become very important to improve the quality and reliability performance in the Foundry. Focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects post electrical fault isolation. In this highly competitive and challenging environment prevalent today, failure analysis throughput time is of utmost important. Therefore quick, efficient and reliable physical failure analysis technique is needed to avoid potential issues from becoming bigger.This paper will discuss the applications of FIB as a defect localization and root cause determination tool through the passive voltage contrast technique, and also will discuss use the method of electron beam assistant chemical vapor deposition (EACVD) to protect the surface defect from the damage of the ion beam during TEM sample preparation.