The Research Of SRAM With Radiation-hardness Advantages

Silicon on Insulator (SOI) Technology has High speed, low voltage low power and radiation-hardness advantages between with original technology, especially its inherited characteristics in radiation-hardness circuit by SOI over bulk. More recently, the explosive growth of portable microelectronic devices have attracted considerable attention on SOI for the fabrication of low-power and low voltage CMOS circuits. In the large family of semiconductor technology, static random access memory (SRAM) attracts much attention because of its broad applications. SRAM has become an indispensable member of semiconductor memory family due to its low power consumption and high-speed performance. Silicon on Insulator (SOI) Technology is application in static random access memory (SRAM) due to outstanding radiation-hardness and lesser capacitance. SOI SRAM enhance 20% in circle time and 30% in collectivity performance.There are five chapters in the article. The first chapter described brief character of SOI, and introduced the main structure of the memory. The second chapter described the devices fabrication in the superficial silicon film. The third chapter described the floating body effect problems. The fourth chapter is about the design of the 2K SOI SRAM. A kind of SRAM with novel address transition detector(ATD) is introduced in this chapter. The conclusion is given in the last chapter.